Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in atomic force microscope based memory deviceQuantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 노광수 | ko |
| dc.date.accessioned | 2013-02-27T22:06:37Z | - |
| dc.date.available | 2013-02-27T22:06:37Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2000 | - |
| dc.identifier.citation | ISAF | - |
| dc.identifier.uri | http://hdl.handle.net/10203/71110 | - |
| dc.language | Korean | - |
| dc.publisher | 한국요업학회 | - |
| dc.title | Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in atomic force microscope based memory deviceQuantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.publicationname | ISAF | - |
| dc.contributor.localauthor | 노광수 | - |
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