DC Field | Value | Language |
---|---|---|
dc.contributor.author | J.W.Lee | ko |
dc.contributor.author | N.I.Lee | ko |
dc.contributor.author | C.H.Han | ko |
dc.date.accessioned | 2013-02-27T21:11:15Z | - |
dc.date.available | 2013-02-27T21:11:15Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-12 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.19, no.12, pp.458 - 458 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/70858 | - |
dc.description.abstract | Stability has been investigated for short-channel hydrogenated n-channel polycrystalline thin-film transistors (poly-Si TFT's) with very thin (12 nm) electron cyclotron resonance (ECR) N2O-plasma gate oxide. The TFT's show negligible changes in the electrical characteristics after hot-carrier stresses, which is due to the highly reliable interface and gate oxide, The hydrogenated TFT's with 3-mu m gate length TFT's exhibit very small degradation (Delta V-th < 15 mV) under hot-carrier stresses and Fowler-Nordheim (F-N) stress (Delta V-th = 61 mV, Delta Gm/Gm = 2.2%, Delta S/S = 4.7%). | - |
dc.language | English | - |
dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
dc.subject | PLASMA | - |
dc.title | Improved Stability of Short-Channel Hydrogenated N-Channel Polycrystalline Silicon Thin Film Transistors with Very Thin ECR N2O-Plasma Gate Oxide | - |
dc.type | Article | - |
dc.identifier.wosid | 000077179400002 | - |
dc.identifier.scopusid | 2-s2.0-0032292317 | - |
dc.type.rims | ART | - |
dc.citation.volume | 19 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 458 | - |
dc.citation.endingpage | 458 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.localauthor | C.H.Han | - |
dc.contributor.nonIdAuthor | J.W.Lee | - |
dc.contributor.nonIdAuthor | N.I.Lee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | ECR N2O plasma oxidation | - |
dc.subject.keywordAuthor | hot-carrier effects | - |
dc.subject.keywordAuthor | poly-Si TFT | - |
dc.subject.keywordAuthor | short-channel | - |
dc.subject.keywordAuthor | stability | - |
dc.subject.keywordPlus | PLASMA | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.