Improved Stability of Short-Channel Hydrogenated N-Channel Polycrystalline Silicon Thin Film Transistors with Very Thin ECR N2O-Plasma Gate Oxide

Cited 21 time in webofscience Cited 0 time in scopus
  • Hit : 463
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorJ.W.Leeko
dc.contributor.authorN.I.Leeko
dc.contributor.authorC.H.Hanko
dc.date.accessioned2013-02-27T21:11:15Z-
dc.date.available2013-02-27T21:11:15Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-12-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.19, no.12, pp.458 - 458-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/70858-
dc.description.abstractStability has been investigated for short-channel hydrogenated n-channel polycrystalline thin-film transistors (poly-Si TFT's) with very thin (12 nm) electron cyclotron resonance (ECR) N2O-plasma gate oxide. The TFT's show negligible changes in the electrical characteristics after hot-carrier stresses, which is due to the highly reliable interface and gate oxide, The hydrogenated TFT's with 3-mu m gate length TFT's exhibit very small degradation (Delta V-th < 15 mV) under hot-carrier stresses and Fowler-Nordheim (F-N) stress (Delta V-th = 61 mV, Delta Gm/Gm = 2.2%, Delta S/S = 4.7%).-
dc.languageEnglish-
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc-
dc.subjectPLASMA-
dc.titleImproved Stability of Short-Channel Hydrogenated N-Channel Polycrystalline Silicon Thin Film Transistors with Very Thin ECR N2O-Plasma Gate Oxide-
dc.typeArticle-
dc.identifier.wosid000077179400002-
dc.identifier.scopusid2-s2.0-0032292317-
dc.type.rimsART-
dc.citation.volume19-
dc.citation.issue12-
dc.citation.beginningpage458-
dc.citation.endingpage458-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.contributor.localauthorC.H.Han-
dc.contributor.nonIdAuthorJ.W.Lee-
dc.contributor.nonIdAuthorN.I.Lee-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorECR N2O plasma oxidation-
dc.subject.keywordAuthorhot-carrier effects-
dc.subject.keywordAuthorpoly-Si TFT-
dc.subject.keywordAuthorshort-channel-
dc.subject.keywordAuthorstability-
dc.subject.keywordPlusPLASMA-
Appears in Collection
RIMS Journal Papers
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 21 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0