DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, JH | ko |
dc.contributor.author | Lim, Koeng Su | ko |
dc.date.accessioned | 2013-02-27T21:07:45Z | - |
dc.date.available | 2013-02-27T21:07:45Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-11 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.11, pp.5625 - 5630 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/70845 | - |
dc.description.abstract | We prepared undoped microcrystalline silicon films (mu c-Si : H) using a mercury-sensitized photochemical vapor deposition system under various film deposition conditions of SiH4/(SiH4 + H-2) gas ratio and total gas flow rate, and investigated the dependence of the film quality on the deposition conditions in order to obtain high-quality undoped microcrystalline films at a high deposition rate. Up to a SiH4/(SiH4 + H-2) gas ratio of similar to 0.1; the crystallite size of the mu c-Si:H films decreased linearly as the ratio increased, but the volume fraction of crystallites remained constant at about 80%. The dark conductivity of the films was very low, in the range of 10(-7)-10(-6) Scm(-1) under nearly all experimental conditions, and so a high photosensitivity of similar to 550 was obtained without the addition of a dopant gas such as diborane. In addition, a high deposition rate of similar to 30 Angstrom/min was obtained at a low total flow rate of 2l sccm. No degradation of the microcrystallinity was observed for the low total flow rate. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | STRUCTURAL-PROPERTIES | - |
dc.subject | FILMS | - |
dc.title | Preparation of high-quality undoped microcrystalline silicon with high deposition rate using mercury-sensitized photochemical vapor deposition method | - |
dc.type | Article | - |
dc.identifier.wosid | A1996VV24100007 | - |
dc.identifier.scopusid | 2-s2.0-0030291158 | - |
dc.type.rims | ART | - |
dc.citation.volume | 35 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 5625 | - |
dc.citation.endingpage | 5630 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.contributor.nonIdAuthor | Jang, JH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | undoped microcrystalline silicon | - |
dc.subject.keywordAuthor | mercury-sensitized photo-CVD | - |
dc.subject.keywordAuthor | SiH4/(SiH4+Ha) gas ratio | - |
dc.subject.keywordAuthor | total flow rate | - |
dc.subject.keywordAuthor | defects | - |
dc.subject.keywordAuthor | deposition rate | - |
dc.subject.keywordAuthor | crystal volume fraction | - |
dc.subject.keywordAuthor | crystallite size | - |
dc.subject.keywordAuthor | absorption coefficients | - |
dc.subject.keywordAuthor | conductivity | - |
dc.subject.keywordAuthor | photosensitivity | - |
dc.subject.keywordPlus | STRUCTURAL-PROPERTIES | - |
dc.subject.keywordPlus | FILMS | - |
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