Improved Copper chemical vapor deposition process by applying substrate bias
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Won-Jun | ko |
| dc.contributor.author | Chun , Soung Soon | ko |
| dc.contributor.author | Rha, Sa-Kyun | ko |
| dc.contributor.author | Lee, Seung-Yun | ko |
| dc.contributor.author | Kim, Dong-Won | ko |
| dc.contributor.author | Park, Chong-Ook | ko |
| dc.date.accessioned | 2013-02-27T20:20:22Z | - |
| dc.date.available | 2013-02-27T20:20:22Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1996 | - |
| dc.identifier.citation | JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.427, pp.207 - 212 | - |
| dc.identifier.issn | 0002-7820 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/70638 | - |
| dc.language | English | - |
| dc.publisher | Wiley-Blackwell | - |
| dc.title | Improved Copper chemical vapor deposition process by applying substrate bias | - |
| dc.type | Article | - |
| dc.identifier.scopusid | 2-s2.0-0030400063 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 427 | - |
| dc.citation.beginningpage | 207 | - |
| dc.citation.endingpage | 212 | - |
| dc.citation.publicationname | JOURNAL OF THE AMERICAN CERAMIC SOCIETY | - |
| dc.contributor.localauthor | Chun , Soung Soon | - |
| dc.contributor.nonIdAuthor | Lee, Won-Jun | - |
| dc.contributor.nonIdAuthor | Rha, Sa-Kyun | - |
| dc.contributor.nonIdAuthor | Lee, Seung-Yun | - |
| dc.contributor.nonIdAuthor | Kim, Dong-Won | - |
| dc.contributor.nonIdAuthor | Park, Chong-Ook | - |
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