We investigated metallic lanthanum nickel cobaltate (LaNi0.6Co0.4O3, LNCO) thin films, which could replace noble metal electrodes in ferroelectric random access memories (FRAM). The LaNi0.6Co0.4O3 films were grown on silicon wafers (SiO2/Si) and on platinized silicon wafers (Pt/Ti/SiO2/Si) by using d.c. reactive sputtering method and were annealed in an oxygen atmosphere at 650 degrees C for 30 min. Pb(Zr0.48Ti0.52)O-3 (PZT) films deposited on LNCO/SiO2/Si and LNCO/Pt/Ti/SiO2/Si substrates had (100)-preferred and random orientations, respectively. The positive remanent polarization of the PZT films on the LNCO/SiO2/Si and the LNCO/Pt/Ti/SiO2/Si substrates were 16 mu C/cm(2) and 17 mu C/cm(2), respectively. The fatigue behaviors of the PZT films on the two types of LNCO bottom electrodes were better than that of the PZT films on a Pt bottom electrode.