DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hyungcheol Shin | ko |
dc.contributor.author | Geunsook Park | ko |
dc.contributor.author | Chenming Hu | ko |
dc.date.accessioned | 2013-02-27T19:01:19Z | - |
dc.date.available | 2013-02-27T19:01:19Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-06 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.42, no.6, pp.911 - 913 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/70252 | - |
dc.description.abstract | There has been a question as to when the oxide damage occurs during plasma etching process. In this paper, we performed experiments to investigate when the plasma etch damage is done to the oxide. Plasma induced ride charging occurs mainly during the over-etch time. There is no measurable additional damage during the moment of plasma turn-on and off. (C) 1998 Published by Elsevier Science Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | Pergamon-Elsevier Science Ltd | - |
dc.subject | OXIDE DAMAGE | - |
dc.title | Plasma Charging Damage During Over-Etch Time of Aluminum | - |
dc.type | Article | - |
dc.identifier.wosid | 000074542500005 | - |
dc.identifier.scopusid | 2-s2.0-0032089836 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 911 | - |
dc.citation.endingpage | 913 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.contributor.localauthor | Hyungcheol Shin | - |
dc.contributor.nonIdAuthor | Geunsook Park | - |
dc.contributor.nonIdAuthor | Chenming Hu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | OXIDE DAMAGE | - |
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