Showing results 1 to 8 of 8
Comparative studies on electrical bias temperature instabilities of In-Ga-Zn-O thin film transistors with different device configurations Ryu, Min-Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; Yoon, Sung-Min, SOLID-STATE ELECTRONICS, v.89, pp.171 - 176, 2013-11 |
Current regulation through change of semiconductor layer carrier injection in metal-oxide semiconductor-insulator-metal thin film rectifier diode = 금속-산화물반도체-절연체-금속 박막 정류 다이오드에서의 반도체 층 캐리어 주입 변화를 통한 전류 조절link Han, Dong-Uk; Park, Sang-Hee; et al, 한국과학기술원, 2020 |
Improving the electrical performance of vertical thin-film transistor by engineering its back-channel interface Lee, Kwang-Heum; Lee, Seung Hee; Cho, Sang-Joon; Hwang, Chi-Sun; Park, Sang-Hee Ko, MICROELECTRONIC ENGINEERING, v.253, 2022-01 |
Modifying subgap states with hydrogen incorporation from source/drain alloys for oxide phototransistors Jeong, Wooseok; Cho, Seong-In; Park, Sang-Hee Ko; Ko, Jong Beom, MATERIALS LETTERS, v.355, 2024-01 |
Nonvolatile memory transistors using solution-processed zinc-tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene) Yoon, Sung-Min; Jung, Soon-Won; Yang, Shin-Hyuk; Byun, Chun-Won; Hwang, Chi-Sun; Park, Sang-Hee Ko; Ishiwara, Hiroshi, ORGANIC ELECTRONICS, v.11, no.11, pp.1746 - 1752, 2010-11 |
Organic vapor-jet-based route for solvent-free additive formation of oxide semiconductors Choi, Jung-Min; Kim, Sungyeon; Kwon, Hyukyun; Kim, Min-Cheol; Moon, Hanul; Park, Jonghyuk; Yoo, Seunghyup, ORGANIC ELECTRONICS, v.43, pp.235 - 239, 2017-04 |
See-Through Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Cho, Doo-Hee; Ryu, Min-Ki; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.5, pp.1494 - 1499, 2011-05 |
Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method Hwang, Chi-Sun; Park, Sang-Hee Ko; Oh, Himchan; Ryu, Min-Ki; Cho, Kyoung-Ik; Yoon, Sung-Min, IEEE ELECTRON DEVICE LETTERS, v.35, no.3, pp.360 - 362, 2014-03 |
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