Browse "College of Engineering(공과대학)" by Subject NONVOLATILE MEMORY DEVICES
Showing results 1 to 8 of 8
| A Recoverable Synapse Device Using a Three-Dimensional Silicon Transistor Hur, Jae; Jang, Byung Chul; Park, Jihun; Moon, Dong-Il; Bae, Hagyoul; Park, Jun-Young; Kim, Gun-Hee; et al, ADVANCED FUNCTIONAL MATERIALS, v.28, no.47, 2018-11 |
| Crystallization behavior of ferroelectric YMnO3 thin films on Si(100) substrates Yoo, DC; Lee, JeongYong; Kim, IS; Kim, YT, JOURNAL OF CRYSTAL GROWTH, v.234, no.2-3, pp.454 - 458, 2002-01 |
| Effects of post-annealing on the microstructure and ferroelectric properties of YMnO3 thin films on Si Yoo, DC; Lee, JeongYong; Kim, IS; Kim, YT, JOURNAL OF CRYSTAL GROWTH, v.233, no.1-2, pp.243 - 247, 2001-11 |
| Formation of Y2O3 interface layer in a YMnO3/Si ferroelectric gate structure Choi, JH; Lee, JeongYong; Kim, YT, APPLIED PHYSICS LETTERS, v.77, no.24, pp.4028 - 4030, 2000-12 |
| Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM) Han, Jin-Woo; Ryu, Seong-Wan; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.2, pp.189 - 191, 2009-02 |
| Microstructure control of YMnO3 thin films on Si (100) substrates Yoo, DC; Lee, JeongYong; Kim, IS; Kim, YT, THIN SOLID FILMS, v.416, no.1-2, pp.62 - 65, 2002-09 |
| The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method Han, Byeol; Lee, Seung-Won; Park, Kwangchol; Park, Chong-Ook; Rha, Sa-Kyun; Lee, Won-Jun, CURRENT APPLIED PHYSICS, v.12, no.2, pp.434 - 436, 2012-03 |
| Two-layer crystallization of amorphous YMnO3 thin films on Si(100) substrates Yoo, DC; Lee, JeongYong; Kim, IS; Kim, YT, JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.86, pp.149 - 151, 2003-01 |
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