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Showing results 1 to 5 of 5

1
A novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure

Choi, S.-J.; Moon, D.-I.; Ding, Y.; Kong, E.Y.J.; Yeo, Y.-C.; Choi, Yang-Kyu, 2010 IEEE International Electron Devices Meeting, IEDM 2010, IEDM, 2010-12-06

2
A novel TFT with a laterally engineered bandgap for of 3D logic and flash memory

Choi, S.-J.; Han, J.-W.; Kim, S.; Moon, D.-I.; Jang, M.; Choi, Yang-Kyu, 2010 Symposium on VLSI Technology, VLSIT 2010, pp.111 - 112, VLSIT, 2010-06-15

3
One-transistor nonvolatile SRAM (ONSRAM) on silicon nanowire SONOS

Ryu, S.-W.; Han, J.-W.; Moon, D.-I.; Choi, Yang-Kyu, 2009 International Electron Devices Meeting, IEDM 2009, pp.633 - 636, 2009-12-07

4
Performance breakthrough in NOR flash memory with dopant-segregated Schottky-barrier (DSSB) SONOS devices

Choi, S.-J.; Han, J.-W.; Kim, S.; Moon, D.-I.; Jang, M.-G.; Jin, S.K.; Kwang, H.K.; et al, 2009 Symposium on VLSI Technology, VLSIT 2009, pp.222 - 223, IEEE, 2009-06-16

5
Ultimately scaled 20nm unified-RAM

Moon, D.-I.; Choi, S.-J.; Kim, C.-J.; Kim, J.-Y.; Lee, J.-S.; Oh, J.-S.; Lee, G.-S.; et al, 2010 IEEE International Electron Devices Meeting, IEEE, 2010-12-06

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