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First-principles semiconductor interface modeling for atomistic device simulations = 제일 원리 기반의 산화 절연막 계면 특성 분석 및 원자 수준 소자의 수송 특성 연구link Jung, Hyo-Eun; Shin, Min Cheol; et al, 한국과학기술원, 2018 |
Full Quantum Simulations of Silicon Schottky Barrier Nanowires with Surface Roughness Scattering Jung, Hyo-Eun; Shin, Mincheol, NANO KOREA 2013, NANO KOREA, 2013-07-10 |
Multi-scale Simulation of Interfacial Roughness Effects in Silicon Nanowires Kim, Byung-Hyun; Jung, Hyo-Eun; Chung, Yong-Chae; Shin, Mincheol; Lee, Kwnag-Ryeol, 2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012, pp.47 - 50, Institute of Electrical and Electronics Engineers Inc., 2012-09-06 |
Surface-Roughness-Limited Mean Free Path in Silicon Nanowire Field Effect Transistors Jung, Hyo-Eun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.6, pp.1861 - 1866, 2013-06 |
Theoretical study of the surface roughness scattering effects on silicon nanowire FETs = 실리콘 나노와이어 트랜지스터에서의 표면 거칠기 충돌영향에 대한 이론연구link Jung, Hyo-Eun; 정효은; et al, 한국과학기술원, 2013 |
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