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Showing results 1 to 4 of 4

1
Characteristics of InGaN/GaN light-emitting diode with Si delta-doped GaN contact layer

Jeon, SR; Jo, MS; Humg, TV; Yang, GM; Cho, HK; Lee, JeongYong; Hwang, SW; et al, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.188, no.1, pp.163 - 166, 2001-11

2
Effects of post annealing and oxidation processes on the removal of damage generated during the shallow trench etch process

Lee, YJ; Hwang, SW; Oho, KH; Lee, JeongYong; Yeom, GY, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.12B, pp.6916 - 6921, 1998-12

3
Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl-2/N-2 and Cl-2/HBr plasmas

Lee, JeongYong; Hwang, SW; Yeom, GY; Lee, JW; Lee, JY, THIN SOLID FILMS, v.341, no.1-2, pp.168 - 171, 1999-03

4
Materials and Fabrication Processes for Transient and Bioresorbable High-Performance Electronics

Hwang, SW; Kim, DH; Tao, H; Kim, TI; Kim, S; Yu, KJ; Panilaitis, B; et al, ADVANCED FUNCTIONAL MATERIALS, v.23, no.33, pp.4087 - 4093, 2013-09

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