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Showing results 33 to 36 of 36

33
Sub-5nm All-Around Gate FinFET for Ultimate Scaling

Lee, Hyunjin; Yu, Lee-Eun; Ryu, Seong-Wan; Han, Jin-Woo; Jeon, Kanghoon; Jang, Dong-Yoon; Kim, Kuk-Hwan; et al, IEEE Symposium on VLSI Technology Digest of Technical Papaers, pp. 70-71, 2006-06-13

34
Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Kim, Sung-Ho; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.53, no.3, pp.389 - 391, 2009-03

35
Vertically standing carbon nanotubes as charge storage nodes for an ultimately scaled nonvolatile memory application

Ryu, Seong-Wan; Huang, Xing-Jiu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.91, no.6, pp.851 - 858, 2007-08

36
Wet chemical needlelike assemblies of single-walled carbon nanotubes on a silicon surface

Huang, Xing-Jiu; Ryu, Seong-Wan; Im, Hyung-Soon; Choi, Yang-Kyu, LANGMUIR, v.23, no.3, pp.991 - 994, 2007-01

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