Showing results 1 to 3 of 3
Effect of a rapid thermal annealing process on the electrical properties of an aluminum-doped indium zinc tin oxide thin film transistor Nam, Yunyong; Yang, Jong-Heon; Jeong, Pilseong; Kwon, Oh-Sang; Pi, Jae-Eun; Cho, Sung Haeng; Hwang, Chi-Sun; et al, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.214, no.1, 2017-01 |
Solution-Processed, Photo-Patternable Fluorinated Sol-Gel Hybrid Materials as a Bio-Fluidic Barrier for Flexible Electronic Systems Lee, Injun; Kim, Yong Ho; Jang, Jinhyeong; Lee, Kwang-Heum; Jang, Junho; Lim, Young-Woo; Park, Sang-Hee Ko; et al, ADVANCED ELECTRONIC MATERIALS, v.6, no.3, pp.1901065, 2020-03 |
Upside-Down Annealing of Oxide Thin-Film Transistors and its Analysis Using Hydrogen-Diffusion Model Park, Seongjin; Kim, Kang; Park, Sang-Hee Ko, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.221, no.9, 2024-05 |
Discover