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Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm(2)/ V.s for High-Speed Operation Yang, Jong Heon; Choi, Ji Hun; Cho, Sung Haeng; Pi, Jae-Eun; Kim, Hee-Ok; Hwang, Chi-Sun; Park, KeeChan; et al, IEEE ELECTRON DEVICE LETTERS, v.39, no.4, pp.508 - 511, 2018-04 |
용액 공정 기반 산화 아연 주석 박막 트랜지스터의 제작 및 특성 = Fabrication and characterization of Solution-Processed Zinc Tin Oxide thin film transistorslink 서석준; Seo, Seok-Jun; et al, 한국과학기술원, 2011 |
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