RF PECVD 법에 의해 증착된 TiN 박막의 조성, 구조 및 전기적 특성

Abstract

Titanium nitride films were deposited on the (100) oriented-p-type silicon substrates of RF plasma enhanced chemical vapor depositiom\n using a gaseous mixutre of TiCl4, N2, H2 and Ar. The chemincal composition, structure and the rsistivituy of the films were investigated with the deposition variables such as the flow rate ratio of N2/TiCl4, the deposition temperature and the RF power. The deposition rate increases with increasing the flow rate ratio of N2TiCl4 and RF power, while the rate decreases with increasing the deposition temperature. As the flow rate ratio of N2/TiCl4 and depostion temperature increases within proper RF pwoer, the Cl concentartion in the films decreases and the stoichiometry and crystallingiy are improved, so decreases the resistivity of the films. The films depostied under the condition of the N2/TiCl4 ratio of 30, the RF power of 50W and the depostion temperature of 620℃ had the Cl content of 1.5at% and the resistivity of 56㏁cm. Also, the bottom coverage of the films was above 60% on the step with the width and depth of 0.6μmx0.6μm.