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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Dynamic negative bias temperature instability and comprehensive modeling in PMOS body-tied FinFETs

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dc.contributor.authorLee, H.ko
dc.contributor.authorLee, C.-H.ko
dc.contributor.authorPark, D.ko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2007-06-27T08:01:37Z-
dc.date.available2007-06-27T08:01:37Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-03-26-
dc.identifier.citation44th Annual IEEE International Reliability Physics Symposium, IRPS 2006, pp.725 - 726-
dc.identifier.urihttp://hdl.handle.net/10203/697-
dc.description.sponsorshipSamsung Electronics Co., Ltd Korea Ministry of Science and Technology.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleDynamic negative bias temperature instability and comprehensive modeling in PMOS body-tied FinFETs-
dc.typeConference-
dc.identifier.wosid000240855800159-
dc.identifier.scopusid2-s2.0-34250747926-
dc.type.rimsCONF-
dc.citation.beginningpage725-
dc.citation.endingpage726-
dc.citation.publicationname44th Annual IEEE International Reliability Physics Symposium, IRPS 2006-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationSan Jose, CA-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorLee, H.-
dc.contributor.nonIdAuthorLee, C.-H.-
dc.contributor.nonIdAuthorPark, D.-
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