A Simple Technique to Measure Generation Lifetime in Partially Depleted SOI MOSFET's

Abstract

This brief presents a new, simple method of measuring the generation lifetime in silicon-on-insulator (SOI)MOSFET's. Lifetime is extracted from the transient characteristics of MOSFET subthreshold current. Using this technique, generation lifetime was mapped across finished Separation by IMplantation of OXygen (SIMOX) wafers and Bonded and Etchedback SOI (BESOT) wafers. BESOI material evaluated in this study had about seven times longer effective generation lifetime than SIMOX material and both the SIMOX and the BESOI are shown to have a lifetime variation of +/-10% across four inch wafers.