Oxygen ion beam-induced abnormal surface topographic development at Ta/Si interface

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We report on an abnormal surface topographic development at a Ta/Si interface, which is believed to be one of the major sources of the irregular interface artifacts in secondary ion mass spectrometry depth profiling by oxygen ion beam. Round crater type topographic development was observed at the interface by sputtering with a 7 keV O-2(+) ion beam and was found to have been formed by blister formation and gradual opening of its center. We suggest that the driving force for this abnormal topographic development is a buildup of compressive stress caused by a volume increase of the Ta layer near the interface, due to oxidation. (C) 1996 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
1996-10
Language
English
Article Type
Article
Keywords

RIPPLE TOPOGRAPHY; BOMBARDMENT; GAAS; SI

Citation

APPLIED PHYSICS LETTERS, v.69, no.17, pp.2483 - 2485

ISSN
0003-6951
DOI
10.1063/1.117505
URI
http://hdl.handle.net/10203/69335
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