Oxygen diffusion through RuO2 bottom electrode of integrated ferroelectric capacitors

Cited 12 time in webofscience Cited 11 time in scopus
  • Hit : 366
  • Download : 0
RuO2 thin films deposited on the barrier layers of TiN and Ru have been annealed in an oxygen ambient at 650 degrees C for 30 min. The thermal stability of the RuO2/diffusion barrier structure was investigated by Auger Electron Spectroscopy (AES) to find the suitable structure for the bottom electrode of integrated ferroelectric capacitors. RuO2 thin films were stably fabricated on TiN and Ru layers with sharp interfaces within RuO2/TiN and RuO2/Ru. It was found that RuO2 could not prevent the diffusion of oxygen through itself and oxidation of the underlying TiN layer. On the other hand, the underlying Ru layer was found to provide a barrier to oxygen diffusion under the same annealing conditions. From these results, RuO2/Ru/poly-Si is thought to be the most available structure for the bottom electrode. (C) 1999 Elsevier Science B.V. AU rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
1999-02
Language
English
Article Type
Article
Keywords

THIN-FILMS

Citation

MATERIALS LETTERS, v.38, no.4, pp.250 - 253

ISSN
0167-577X
DOI
10.1016/S0167-577X(98)00167-0
URI
http://hdl.handle.net/10203/69334
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 12 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0