DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, SG | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-02-27T15:18:37Z | - |
dc.date.available | 2013-02-27T15:18:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-09 | - |
dc.identifier.citation | PHYSICAL REVIEW B, v.54, no.12, pp.8522 - 8526 | - |
dc.identifier.issn | 0163-1829 | - |
dc.identifier.uri | http://hdl.handle.net/10203/69295 | - |
dc.description.abstract | We study the hydrogen passivation of carbon accepters and the stability of defect complexes containing carbon and hydrogen in GaAs through first-principles pseudopotential calculations. A carbon-hydrogen C-As(-)-(HCAs)(0) complex with two C-As atoms at second-neighbor As sites is found to be energetically more favorable than the isolated configuration of C-As(-) and H-C-As. We also find that a (H-C-As)(2) complex containing two H atoms is more stable than two isolated H-C-As pairs. Hydrogen dissociation from the C-As(-)-(HCAs)(0) center upon annealing leads to the formation of a C-As-C-As pair, and the C-As-C-As complex subsequently dissociates into two isolated C-As accepters. Here we propose a dissociation process that involves a C-C split-interstitial complex at an As site and a second-neighbor As vacancy, with an energy barrier of about 1.7 eV, which is similar to that for Zn diffusion. | - |
dc.language | English | - |
dc.publisher | AMERICAN PHYSICAL SOC | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | P-TYPE GAAS | - |
dc.subject | DOPED GAAS | - |
dc.subject | DIFFUSION | - |
dc.subject | LAYERS | - |
dc.subject | PSEUDOPOTENTIALS | - |
dc.subject | COMPENSATION | - |
dc.subject | PASSIVATION | - |
dc.subject | IMPURITY | - |
dc.subject | ENERGIES | - |
dc.title | Atomic structure of defect complexes containing carbon and hydrogen in GaAs | - |
dc.type | Article | - |
dc.identifier.wosid | A1996VM97600045 | - |
dc.identifier.scopusid | 2-s2.0-0642330311 | - |
dc.type.rims | ART | - |
dc.citation.volume | 54 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 8522 | - |
dc.citation.endingpage | 8526 | - |
dc.citation.publicationname | PHYSICAL REVIEW B | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Lee, SG | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | P-TYPE GAAS | - |
dc.subject.keywordPlus | DOPED GAAS | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | PSEUDOPOTENTIALS | - |
dc.subject.keywordPlus | COMPENSATION | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | IMPURITY | - |
dc.subject.keywordPlus | ENERGIES | - |
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