3MeV P+ 이온주입된 실리콘의 열처리에 따른 X-ray Rocking Curve 분석X-ray Rocking Curve Analyses of Post-annealed 3 MeV P+ Implanted Silicon
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조남훈 | ko |
| dc.contributor.author | 장기완 | ko |
| dc.contributor.author | 김창수 | ko |
| dc.contributor.author | 이정용 | ko |
| dc.contributor.author | 노재상 | ko |
| dc.date.accessioned | 2013-02-27T14:45:30Z | - |
| dc.date.available | 2013-02-27T14:45:30Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995-03 | - |
| dc.identifier.citation | 한국진공학회지, v.4, no.1, pp.109 - 117 | - |
| dc.identifier.issn | 1225-8822 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/69157 | - |
| dc.language | Korean | - |
| dc.publisher | 한국진공학회 | - |
| dc.title | 3MeV P+ 이온주입된 실리콘의 열처리에 따른 X-ray Rocking Curve 분석 | - |
| dc.title.alternative | X-ray Rocking Curve Analyses of Post-annealed 3 MeV P+ Implanted Silicon | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 4 | - |
| dc.citation.issue | 1 | - |
| dc.citation.beginningpage | 109 | - |
| dc.citation.endingpage | 117 | - |
| dc.citation.publicationname | 한국진공학회지 | - |
| dc.contributor.localauthor | 이정용 | - |
| dc.contributor.nonIdAuthor | 조남훈 | - |
| dc.contributor.nonIdAuthor | 장기완 | - |
| dc.contributor.nonIdAuthor | 김창수 | - |
| dc.contributor.nonIdAuthor | 노재상 | - |
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