Si 기판 위에 직류 마르네트론 스퍼터링 방법으로 증착한 Ti 박막의 잔류 응력 변화와 잔류 응력이 TiSi2 형성 속도에 미치는 영향

Abstract

The residual stresses in Ti films, deposited on (001) Si substrate via dc magnetron sputtering, have been measured using XRD method as a function of Ar pressure and bias voltage. Tensile stress is observed in Ti thin films deposited at relatively high Ar pressure and high deposition rate, while compressive stress is observed in Ti thin films deposited at low Ar pressure. The application of bias voltage also induces a compressive stress This is interpreted as due to the shot peening effect by energetic Ti atoms and/or Ar ions. The study of the reaction of Ti thin films with Si substrate using XRD and sheet resistance measurements indicated that the compressive stresses in Ti thin films persist up to TiSi₂ formation temperatures, And these compressive stresses can facilitate the formation of C54 structure by lowering the C49→C54 transition temperature.