Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

Abstract

The hydrogen annealing process has been used to improve surface roughness of Si-fin in CMOS FinFETs for the first time. The hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to hydrogen annealing. These results suggest that the hydrogen annealing is very effective for improving the device performance and for attaining a high-quality surface of the etched Si-fin.