DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, HC | ko |
dc.contributor.author | Lee, Jai Young | ko |
dc.date.accessioned | 2013-02-27T13:56:16Z | - |
dc.date.available | 2013-02-27T13:56:16Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-12 | - |
dc.identifier.citation | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.8, no.6, pp.385 - 390 | - |
dc.identifier.issn | 0957-4522 | - |
dc.identifier.uri | http://hdl.handle.net/10203/68949 | - |
dc.description.abstract | Aluminium nitride thin films have been fabricated on silicon wafers by reactive r.f. magnetron sputtering in mixed Ar-N-2 discharge with variation of negative bias voltage. The effect of negative bias voltage on the 2 microstructures of AlN thin films have been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), stress measurement, Auger electron spectroscopy (AES), etc. While the negative bias voltage was varied in the range 0 to -45 V, highly c-axis oriented film can be fabricated at -30 V, and the grain size and compressive stress increase with the negative bias voltage. From the plasma analysis, the dominant positive chemical species is identified as N-2(+) ions. The above results can be understood considering that the kinetic energy transfer and flux of N-2(+) ions increases with increasing negative bias voltage. | - |
dc.language | English | - |
dc.publisher | KLUWER ACADEMIC PUBL | - |
dc.title | Effect of negative bias voltage on the microstructures of AlN thin films fabricated by reactive rf magnetron sputtering | - |
dc.type | Article | - |
dc.identifier.wosid | 000071127600003 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 385 | - |
dc.citation.endingpage | 390 | - |
dc.citation.publicationname | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | - |
dc.identifier.doi | 10.1023/A:1018551726015 | - |
dc.contributor.nonIdAuthor | Lee, HC | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHEMICAL VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ALUMINUM NITRIDE | - |
dc.subject.keywordPlus | ION-BOMBARDMENT | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | PRESSURE | - |
dc.subject.keywordPlus | TIN | - |
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