Direct Wafer Bonding법에 의한 InP 기판과 Si₃N₄/InP의 접합특성The Characteristics of the Direct Wafer Bonding between InP Wafers and Si3N4/InP
- Publisher
- 한국재료학회
- Issue Date
- 1998-12
- Language
- Korean
- Citation
한국재료학회지, v.8, no.10, pp.890 - 897
- ISSN
- 1225-0562
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.