DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김재환 | ko |
dc.contributor.author | 신중식 | ko |
dc.contributor.author | 김성태 | ko |
dc.contributor.author | 노광수 | ko |
dc.contributor.author | 위당문 | ko |
dc.contributor.author | 이원종 | ko |
dc.date.accessioned | 2013-02-27T11:37:46Z | - |
dc.date.available | 2013-02-27T11:37:46Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995-04 | - |
dc.identifier.citation | 한국진공학회지, v.4, no.1, pp.145 - 150 | - |
dc.identifier.issn | 1225-8822 | - |
dc.identifier.uri | http://hdl.handle.net/10203/68309 | - |
dc.description.abstract | PZT thin films were fabricated on Pt/Ti/SiO2/Si substrates at 500℃ by ECR-PECVD for the application to the charge storage capacitor of ULSI DRAMs. Perovskite single phase PZT films were obtained by controling the film compositional ratio Pb/(Zr+Ti) close to 1. The anion concentrations in the PZT films were successfully controlled by adjusting the flow rates of each MO sources. Capacitance of a typical 94 nm thick PZT film prepared at 500℃ in this work was about 5.3 uF/cm², which corresponds to the equivalent SiO2 thickness of 0.65nm. | - |
dc.language | Korean | - |
dc.publisher | 한국진공학회 | - |
dc.title | ECR-PECVD법을 사용한 ULSI DRAM 용 PZT 박막 제조 | - |
dc.title.alternative | ECR-PECVD PZT thin films for the charge storage capacitor of ULSI DRAMs | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 4 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 145 | - |
dc.citation.endingpage | 150 | - |
dc.citation.publicationname | 한국진공학회지 | - |
dc.contributor.localauthor | 노광수 | - |
dc.contributor.localauthor | 위당문 | - |
dc.contributor.localauthor | 이원종 | - |
dc.contributor.nonIdAuthor | 김재환 | - |
dc.contributor.nonIdAuthor | 신중식 | - |
dc.contributor.nonIdAuthor | 김성태 | - |
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