Noise Performances of Pseudomorphic A1GaAs/InGaAs/GaAs HEMTs with Wide Head T-Shaped Gate Recessed by ECR Plasma Etching
- Publisher
- Japan Soc Applied Physics
- Issue Date
- 1999-02
- Language
- English
- Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.38, no.2, pp.654 - 657
- ISSN
- 0021-4922
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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