DC Field | Value | Language |
---|---|---|
dc.contributor.author | LEE, CW | ko |
dc.contributor.author | KIM, YT | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.date.accessioned | 2013-02-27T08:08:26Z | - |
dc.date.available | 2013-02-27T08:08:26Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1994-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.64, no.5, pp.619 - 621 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/67394 | - |
dc.description.abstract | Thermally stable tungsten nitride/tungsten bilayer has been proposed for the application of metallization. This bilayer is sequentially formed by plasma enhanced chemical vapor deposition without breaking vacuum. The Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy reveal that the interaction between the W and Si substrate can be prevented by interposing a 800-Angstrom-thick W67N33 layer. The W67N33/W bilayer maintains the integrity of the interface during annealing at 850 degrees C for 30 min without the formation of Si2W and interdiffusion phenomena. Sheet resistivity of the W67N33/W bilayer is gradually decreased from 17 to 12 mu Omega cm at annealing temperatures up to 850 degrees C. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | CHEMICAL VAPOR-DEPOSITION | - |
dc.subject | LOW-PRESSURE | - |
dc.subject | ENCROACHMENT | - |
dc.subject | PHASE | - |
dc.title | NEW METHOD TO IMPROVE THERMAL-STABILITY IN THE INTERFACE OF SILICON AND TUNGSTEN BY THE INTERPOSITION OF PLASMA-DEPOSITED TUNGSTEN NITRIDE THIN-FILM | - |
dc.type | Article | - |
dc.identifier.wosid | A1994MU63300030 | - |
dc.identifier.scopusid | 2-s2.0-0001477024 | - |
dc.type.rims | ART | - |
dc.citation.volume | 64 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 619 | - |
dc.citation.endingpage | 621 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.111068 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | LEE, CW | - |
dc.contributor.nonIdAuthor | KIM, YT | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHEMICAL VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | LOW-PRESSURE | - |
dc.subject.keywordPlus | ENCROACHMENT | - |
dc.subject.keywordPlus | PHASE | - |
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