DC Field | Value | Language |
---|---|---|
dc.contributor.author | LEE, CW | ko |
dc.contributor.author | KIM, YT | ko |
dc.contributor.author | LEE, C | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | MIN, SK | ko |
dc.contributor.author | PARK, YW | ko |
dc.date.accessioned | 2013-02-27T07:58:45Z | - |
dc.date.available | 2013-02-27T07:58:45Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1994-01 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.12, no.1, pp.69 - 72 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/67361 | - |
dc.description.abstract | It is proposed that the plasma enhanced chemical vapor deposited tungsten nitride (PECVD-W-N) thin film is used as a diffusion barrier to prevent the interdiffusion between Al and Si during postannealing process. The atomic concentration of N in W-N film deposited with NH3/WF6 partial pressure ratio of 0.5 is about 33 at. % and its resistivity is 90-110 muOMEGA cm. The Rutherford backscattering spectrometry, Auger electron depth profiles, x-ray diffraction, and scanning electron micrographs show that 900 angstrom PECVD-W67N33 film interposed between Al and Si is more impermeable than PECVD-W film due to N atoms and it also keeps its chemical integrity during the postfurnace annealing at 600-degrees-C for 30 min in Ar ambient. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | DIFFUSION BARRIER | - |
dc.subject | THIN-FILMS | - |
dc.subject | SILICON | - |
dc.subject | ZRN | - |
dc.title | PERFORMANCE OF THE PLASMA-DEPOSITED TUNGSTEN NITRIDE BARRIER TO PREVENT THE INTERDIFFUSION OF AL AND SI | - |
dc.type | Article | - |
dc.identifier.wosid | A1994MX61700014 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 69 | - |
dc.citation.endingpage | 72 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE TECHNOLOGY B | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | LEE, CW | - |
dc.contributor.nonIdAuthor | KIM, YT | - |
dc.contributor.nonIdAuthor | MIN, SK | - |
dc.contributor.nonIdAuthor | PARK, YW | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DIFFUSION BARRIER | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | ZRN | - |
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