DC Field | Value | Language |
---|---|---|
dc.contributor.author | HIGUCHI, K | ko |
dc.contributor.author | TABUCHI, K | ko |
dc.contributor.author | Lim, Koeng Su | ko |
dc.contributor.author | KONAGAI, M | ko |
dc.contributor.author | TAKAHASHI, K | ko |
dc.date.accessioned | 2013-02-27T06:55:45Z | - |
dc.date.available | 2013-02-27T06:55:45Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-08 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.30, no.8, pp.1635 - 1640 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/67105 | - |
dc.description.abstract | Amorphous Si solar cells with delta-doped (delta-doped) p-layer were prepared by a multichamber photochemical vapor deposition (photo-CVD) system. By optimizing the structure of the delta-doped p-layer, a conversion efficiency of 12.3% (AM1) was obtained for small-area solar cells with a delta-doped (AM1) was obtained for small-area solar cells with a delta-doped p-layer using B2H6 as a dopant source. The delta-doped p-layers deposited with trimethylboron (TMB) and triethylboron (TEB) as new boron sources were characterized. It was found that the boron layers obtained with TMB by photo-CVD contain a large amount of carbon atoms which degrade the solar cell performance. Carbon contamination was suppressed both by the plasma CVD method with a gas mixture of TMB, H2 and He and by the photo-CVD method with TEB. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | P-LAYER | - |
dc.title | HIGH-EFFICIENCY DELTA-DOPED AMORPHOUS-SILICON SOLAR-CELLS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION | - |
dc.type | Article | - |
dc.identifier.wosid | A1991GE24900009 | - |
dc.identifier.scopusid | 2-s2.0-0026205461 | - |
dc.type.rims | ART | - |
dc.citation.volume | 30 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 1635 | - |
dc.citation.endingpage | 1640 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.identifier.doi | 10.1143/JJAP.30.1635 | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.contributor.nonIdAuthor | HIGUCHI, K | - |
dc.contributor.nonIdAuthor | TABUCHI, K | - |
dc.contributor.nonIdAuthor | KONAGAI, M | - |
dc.contributor.nonIdAuthor | TAKAHASHI, K | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | DELTA-DOPED P-LAYER | - |
dc.subject.keywordAuthor | AMORPHOUS SILICON | - |
dc.subject.keywordAuthor | SOLAR CELL | - |
dc.subject.keywordAuthor | PHOTO-CVD | - |
dc.subject.keywordPlus | P-LAYER | - |
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