DC Field | Value | Language |
---|---|---|
dc.contributor.author | GOSWAMI, S | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.contributor.author | BISWAS, D | ko |
dc.contributor.author | BHATTACHARYA, PK | ko |
dc.contributor.author | SINGH, J | ko |
dc.contributor.author | LI, WQ | ko |
dc.date.accessioned | 2013-02-27T06:31:56Z | - |
dc.date.available | 2013-02-27T06:31:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-03 | - |
dc.identifier.citation | IEEE JOURNAL OF QUANTUM ELECTRONICS, v.27, no.3, pp.760 - 768 | - |
dc.identifier.issn | 0018-9197 | - |
dc.identifier.uri | http://hdl.handle.net/10203/67015 | - |
dc.description.abstract | The principles of an integrated optoelectronic controller-modulator device, based on excitonic transitions and the enhanced Stark effect in quantum wells, are outlined. The device consists of a controller and a modulator as components. The controller is a heterojunction phototransistor with multiquantum wells incorporated in the base-collector depletion region. The amplified output of the controller enables switching of the modulator for low optical power levels. Experimental results on GaAs-AlGaAs based devices, realized by one-step molecular beam epitaxy and selective etching, are presented. The bipolar devices have current gain approximately 35-40. The integrating-thresholding properties of the device are demonstrated and switching characteristics for 10-mu-W input to the controller are measured. Cascadability, optoelectronic amplification, and multistage operation are demonstrated in terms of a fan out of eight devices. The integrating-thresholding properties also lend themselves to the implementation of neurons and to the realization of decision making processes. The controller-modulator device can form a versatile basic module for optical computation architectures. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | CONTROLLER-MODULATOR | - |
dc.subject | NEURAL NETWORKS | - |
dc.subject | WELL STRUCTURES | - |
dc.subject | DEVICE | - |
dc.title | LOW-POWER EXCITON-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS FOR THRESHOLDING LOGIC APPLICATIONS | - |
dc.type | Article | - |
dc.identifier.wosid | A1991FR34700058 | - |
dc.identifier.scopusid | 2-s2.0-0026120656 | - |
dc.type.rims | ART | - |
dc.citation.volume | 27 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 760 | - |
dc.citation.endingpage | 768 | - |
dc.citation.publicationname | IEEE JOURNAL OF QUANTUM ELECTRONICS | - |
dc.identifier.doi | 10.1109/3.81386 | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.contributor.nonIdAuthor | GOSWAMI, S | - |
dc.contributor.nonIdAuthor | BISWAS, D | - |
dc.contributor.nonIdAuthor | BHATTACHARYA, PK | - |
dc.contributor.nonIdAuthor | SINGH, J | - |
dc.contributor.nonIdAuthor | LI, WQ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CONTROLLER-MODULATOR | - |
dc.subject.keywordPlus | NEURAL NETWORKS | - |
dc.subject.keywordPlus | WELL STRUCTURES | - |
dc.subject.keywordPlus | DEVICE | - |
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