DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwak, TW | ko |
dc.contributor.author | Lee, MC | ko |
dc.contributor.author | Cho, Gyu-Hyeong | ko |
dc.date.accessioned | 2008-07-31 | - |
dc.date.available | 2008-07-31 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-12 | - |
dc.identifier.citation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.42, pp.2666 - 2676 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | http://hdl.handle.net/10203/6692 | - |
dc.description.abstract | This paper presents a hybrid switching amplitude modulator for class-E2 EDGE polar transmitters. To achieve both high efficiency and high speed, it consists of a wideband buffered linear amplifier as a voltage source and a PWM switching amplifier with a 2 MHz switching frequency as a dependent current source. The linear amplifier with a novel class-AB topology has a high current-driving capability of approximately 300 mA with a bandwidth wider than 10 MHz. It can also operate on four quadrants with very low output impedance of about 200 m Omega at the switching frequency attenuating the output ripple voltage to less than 12 mV(PP), A feedforward path, a PWM control, and a third-order ripple filter are used to reduce the current burden of the linear amplifier. The output voltage of the hybrid modulator ranges from 0.4 to 3 V for a 3.5 V supply. It can drive an RF power amplifier with an equivalent impedance of 4 Omega up to a maximum output power of 2.25 W with a maximum efficiency of 88.3%. The chip has been fabricated in a 0.35 mu m CMOS process and occupies an area of 4.7 mm(2). | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | POWER-AMPLIFIER | - |
dc.subject | HIGH-EFFICIENCY | - |
dc.subject | LOW-VOLTAGE | - |
dc.title | A 2 WCMOS hybrid switching amplitude modulator for EDGE polar transmitters | - |
dc.type | Article | - |
dc.identifier.wosid | 000251292000004 | - |
dc.identifier.scopusid | 2-s2.0-51849143800 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.beginningpage | 2666 | - |
dc.citation.endingpage | 2676 | - |
dc.citation.publicationname | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Gyu-Hyeong | - |
dc.contributor.nonIdAuthor | Kwak, TW | - |
dc.contributor.nonIdAuthor | Lee, MC | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | buffer | - |
dc.subject.keywordAuthor | class AB | - |
dc.subject.keywordAuthor | dc-dc converter | - |
dc.subject.keywordAuthor | EDGE | - |
dc.subject.keywordAuthor | low dropout (LDO) | - |
dc.subject.keywordAuthor | low output impedance | - |
dc.subject.keywordAuthor | operational amplifier | - |
dc.subject.keywordAuthor | polar transmitter | - |
dc.subject.keywordAuthor | power amplifier (PA) | - |
dc.subject.keywordAuthor | pulsewidth modulation (PWM) | - |
dc.subject.keywordAuthor | switching amplifier | - |
dc.subject.keywordPlus | POWER-AMPLIFIER | - |
dc.subject.keywordPlus | HIGH-EFFICIENCY | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.