PRESSURE DEPENDENCES OF BAND-GAPS AND OPTICAL-PHONON FREQUENCY IN CUBIC SIC

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dc.contributor.authorCHEONG, BHko
dc.contributor.authorChang, Kee-Jooko
dc.contributor.authorCOHEN, MLko
dc.date.accessioned2013-02-27T05:04:00Z-
dc.date.available2013-02-27T05:04:00Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1991-07-
dc.identifier.citationPHYSICAL REVIEW B, v.44, no.3, pp.1053 - 1056-
dc.identifier.issn0163-1829-
dc.identifier.urihttp://hdl.handle.net/10203/66592-
dc.description.abstractThe high-pressure behavior of the direct and indirect band gaps in zinc-blende-structure SiC is examined with use of self-consistent ab initio pseudopotential calculations. The fundamental band gap from GAMMA-15-nu to X1c is found to decrease linearly with pressure up to 200 kbar. This result disagrees with a recent experimental finding of strong sublinear behavior at pressures of 10 to 15 kbar. The linear pressure coefficients of the fundamental band pp and the transverse-optical-phonon frequency at the GAMMA-point in the Brillouin zone are in good agreement with measured values.-
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.subjectGROUND-STATE PROPERTIES-
dc.subjectSILICON-CARBIDE-
dc.subjectRAMAN PHONONS-
dc.subjectCOEFFICIENTS-
dc.subjectCHARGE-
dc.subjectGE-
dc.titlePRESSURE DEPENDENCES OF BAND-GAPS AND OPTICAL-PHONON FREQUENCY IN CUBIC SIC-
dc.typeArticle-
dc.identifier.wosidA1991FW10500012-
dc.identifier.scopusid2-s2.0-0001480524-
dc.type.rimsART-
dc.citation.volume44-
dc.citation.issue3-
dc.citation.beginningpage1053-
dc.citation.endingpage1056-
dc.citation.publicationnamePHYSICAL REVIEW B-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorCHEONG, BH-
dc.contributor.nonIdAuthorCOHEN, ML-
dc.type.journalArticleArticle-
dc.subject.keywordPlusGROUND-STATE PROPERTIES-
dc.subject.keywordPlusSILICON-CARBIDE-
dc.subject.keywordPlusRAMAN PHONONS-
dc.subject.keywordPlusCOEFFICIENTS-
dc.subject.keywordPlusCHARGE-
dc.subject.keywordPlusGE-
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