DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHEONG, BH | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.contributor.author | COHEN, ML | ko |
dc.date.accessioned | 2013-02-27T05:04:00Z | - |
dc.date.available | 2013-02-27T05:04:00Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-07 | - |
dc.identifier.citation | PHYSICAL REVIEW B, v.44, no.3, pp.1053 - 1056 | - |
dc.identifier.issn | 0163-1829 | - |
dc.identifier.uri | http://hdl.handle.net/10203/66592 | - |
dc.description.abstract | The high-pressure behavior of the direct and indirect band gaps in zinc-blende-structure SiC is examined with use of self-consistent ab initio pseudopotential calculations. The fundamental band gap from GAMMA-15-nu to X1c is found to decrease linearly with pressure up to 200 kbar. This result disagrees with a recent experimental finding of strong sublinear behavior at pressures of 10 to 15 kbar. The linear pressure coefficients of the fundamental band pp and the transverse-optical-phonon frequency at the GAMMA-point in the Brillouin zone are in good agreement with measured values. | - |
dc.language | English | - |
dc.publisher | AMERICAN PHYSICAL SOC | - |
dc.subject | GROUND-STATE PROPERTIES | - |
dc.subject | SILICON-CARBIDE | - |
dc.subject | RAMAN PHONONS | - |
dc.subject | COEFFICIENTS | - |
dc.subject | CHARGE | - |
dc.subject | GE | - |
dc.title | PRESSURE DEPENDENCES OF BAND-GAPS AND OPTICAL-PHONON FREQUENCY IN CUBIC SIC | - |
dc.type | Article | - |
dc.identifier.wosid | A1991FW10500012 | - |
dc.identifier.scopusid | 2-s2.0-0001480524 | - |
dc.type.rims | ART | - |
dc.citation.volume | 44 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 1053 | - |
dc.citation.endingpage | 1056 | - |
dc.citation.publicationname | PHYSICAL REVIEW B | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | CHEONG, BH | - |
dc.contributor.nonIdAuthor | COHEN, ML | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | GROUND-STATE PROPERTIES | - |
dc.subject.keywordPlus | SILICON-CARBIDE | - |
dc.subject.keywordPlus | RAMAN PHONONS | - |
dc.subject.keywordPlus | COEFFICIENTS | - |
dc.subject.keywordPlus | CHARGE | - |
dc.subject.keywordPlus | GE | - |
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