Crystal Growth and Characterization of the X-ray and gamma-ray Detector Material Cs2Hg6S7

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dc.contributor.authorLi, Haoko
dc.contributor.authorPeters, John A.ko
dc.contributor.authorLiu, Zhifuko
dc.contributor.authorSebastian, Mariako
dc.contributor.authorMalliakas, Christos D.ko
dc.contributor.authorAndroulakis, Johnko
dc.contributor.authorZhao, Lidongko
dc.contributor.authorChung, Inko
dc.contributor.authorNguyen, Sandy L.ko
dc.contributor.authorJohnsen, Simonko
dc.contributor.authorWessels, Bruce W.ko
dc.contributor.authorKanatzidis, Mercouri G.ko
dc.date.accessioned2013-02-26T04:49:26Z-
dc.date.available2013-02-26T04:49:26Z-
dc.date.created2013-01-28-
dc.date.created2013-01-28-
dc.date.created2013-01-28-
dc.date.issued2012-06-
dc.identifier.citationCRYSTAL GROWTH DESIGN, v.12, no.6, pp.3250 - 3256-
dc.identifier.issn1528-7483-
dc.identifier.urihttp://hdl.handle.net/10203/66147-
dc.description.abstractCs2Hg6S7 is a promising compound for X-ray and gamma-ray detection with a band gap of 1.63 eV. A new method is reported for the synthesis of Cs2Hg6S7, along with growth studies of large Cs2Hg6S7 crystals of dimensions up to several centimeters using the Bridgman method. Our growth technique gives reproducible crystals with high resistivity (10(6) ohm center dot cm). Crystals grown in this work exhibit figure of merit mobility lifetime (mu tau) products comparable to commercial cadmium zinc telluride (CZT). The Cs2Hg6S7 crystals exhibit a strong photoluminescence signal at low temperature in the range 1.50-1.75 eV. The thermal properties of the crystal, including the thermal expansion coefficient and the thermal conductivity, have been characterized. The nature of defects affecting the charge transport properties in the as-grown Cs2Hg6S7 crystals is discussed. The noncentrosymmetric character of the tetragonal crystal structure (space group P4(2)nm) gives rise to a nonlinear optical second harmonic generation response.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectPBI2 SINGLE-CRYSTALS-
dc.subjectDIMENSIONAL REDUCTION-
dc.subjectTHERMOELECTRIC PROPERTIES-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectION-EXCHANGE-
dc.subjectCDTE-
dc.subjectRB-
dc.subjectCS-
dc.subjectSE-
dc.titleCrystal Growth and Characterization of the X-ray and gamma-ray Detector Material Cs2Hg6S7-
dc.typeArticle-
dc.identifier.wosid000304838000067-
dc.identifier.scopusid2-s2.0-84861885787-
dc.type.rimsART-
dc.citation.volume12-
dc.citation.issue6-
dc.citation.beginningpage3250-
dc.citation.endingpage3256-
dc.citation.publicationnameCRYSTAL GROWTH DESIGN-
dc.identifier.doi10.1021/cg300385s-
dc.contributor.localauthorChung, In-
dc.contributor.nonIdAuthorLi, Hao-
dc.contributor.nonIdAuthorPeters, John A.-
dc.contributor.nonIdAuthorLiu, Zhifu-
dc.contributor.nonIdAuthorSebastian, Maria-
dc.contributor.nonIdAuthorMalliakas, Christos D.-
dc.contributor.nonIdAuthorAndroulakis, John-
dc.contributor.nonIdAuthorZhao, Lidong-
dc.contributor.nonIdAuthorNguyen, Sandy L.-
dc.contributor.nonIdAuthorJohnsen, Simon-
dc.contributor.nonIdAuthorWessels, Bruce W.-
dc.contributor.nonIdAuthorKanatzidis, Mercouri G.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPBI2 SINGLE-CRYSTALS-
dc.subject.keywordPlusDIMENSIONAL REDUCTION-
dc.subject.keywordPlusTHERMOELECTRIC PROPERTIES-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusION-EXCHANGE-
dc.subject.keywordPlusCDTE-
dc.subject.keywordPlusRB-
dc.subject.keywordPlusCS-
dc.subject.keywordPlusSE-
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