DC Field | Value | Language |
---|---|---|
dc.contributor.author | SNNIKRISHNAN, U | ko |
dc.contributor.author | Yoon, Giwan | ko |
dc.contributor.author | KWONG, DL | ko |
dc.date.accessioned | 2013-02-25T21:47:53Z | - |
dc.date.available | 2013-02-25T21:47:53Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1994-04 | - |
dc.identifier.citation | THIN SOLID FILMS, v.241, no.1-2, pp.329 - 334 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/65548 | - |
dc.description.abstract | Rapid thermal chemical vapor deposition (RT-CVD) has received considerable attention as a novel in situ multiprocessing tool capable of meeting the stringent requirements of ULSI manufacturing. In this paper, we review the significant benefits provided by RT-CVD for IC manufacturing and the progress made in developing RT-CVD as an integrated processing module for ULSI device fabrication. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA LAUSANNE | - |
dc.title | APPLICATIONS OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION TECHNOLOGY TO ULSI MATERIAL PROCESSING AND DEVICE FABRICATION | - |
dc.type | Article | - |
dc.identifier.wosid | A1994NG66300069 | - |
dc.type.rims | ART | - |
dc.citation.volume | 241 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 329 | - |
dc.citation.endingpage | 334 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.identifier.doi | 10.1016/0040-6090(94)90451-0 | - |
dc.contributor.localauthor | Yoon, Giwan | - |
dc.contributor.nonIdAuthor | SNNIKRISHNAN, U | - |
dc.contributor.nonIdAuthor | KWONG, DL | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | POLYSILICON | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordPlus | GROWTH | - |
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