Plasma enhanced chemically vapor deposited aluminum oxide films as a new etch mask material for microelectronic fabrication
- Issue Date
- 1994-04
- Citation
KOREAN APPLIED PHYSICS, v.7, no.4, pp.289 - 296
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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