MBE 방법으로 성장된 (110)CoGa/GaAs의 구조적 특성Structural Properties of the (110)CoGa/GaAs Grown by Molecular Beam Epitaxy
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 우용득 | ko |
| dc.contributor.author | 강태원 | ko |
| dc.contributor.author | 이정용 | ko |
| dc.date.accessioned | 2013-02-25T20:01:13Z | - |
| dc.date.available | 2013-02-25T20:01:13Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1992-12 | - |
| dc.identifier.citation | 새물리, v.32, no.5, pp.720 - 726 | - |
| dc.identifier.issn | 0374-4914 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/64867 | - |
| dc.language | Korean | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | MBE 방법으로 성장된 (110)CoGa/GaAs의 구조적 특성 | - |
| dc.title.alternative | Structural Properties of the (110)CoGa/GaAs Grown by Molecular Beam Epitaxy | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 32 | - |
| dc.citation.issue | 5 | - |
| dc.citation.beginningpage | 720 | - |
| dc.citation.endingpage | 726 | - |
| dc.citation.publicationname | 새물리 | - |
| dc.contributor.localauthor | 이정용 | - |
| dc.contributor.nonIdAuthor | 우용득 | - |
| dc.contributor.nonIdAuthor | 강태원 | - |
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