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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Journal Papers(저널논문)

FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS

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dc.contributor.authorASANO, Tko
dc.contributor.authorISHIWARA, Hko
dc.contributor.authorLee, Hee Chulko
dc.contributor.authorTSUTSUI, Kko
dc.contributor.authorFURUKAWA, Sko
dc.date.accessioned2013-02-25T19:11:37Z-
dc.date.available2013-02-25T19:11:37Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1986-02-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.25, no.2, pp.139 - 141-
dc.identifier.urihttp://hdl.handle.net/10203/64584-
dc.languageEnglish-
dc.publisherJAPAN J APPLIED PHYSICS-
dc.titleFORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS-
dc.typeArticle-
dc.identifier.wosidA1986A311000016-
dc.identifier.scopusid2-s2.0-0022663381-
dc.type.rimsART-
dc.citation.volume25-
dc.citation.issue2-
dc.citation.beginningpage139-
dc.citation.endingpage141-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS-
dc.identifier.doi10.1143/JJAP.25.L139-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorASANO, T-
dc.contributor.nonIdAuthorISHIWARA, H-
dc.contributor.nonIdAuthorTSUTSUI, K-
dc.contributor.nonIdAuthorFURUKAWA, S-
dc.type.journalArticleArticle-
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