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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

METASTABILITY AND CHEMICAL BONDING OF S-INDUCED DEFECTS IN GAAS AND INP

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dc.contributor.authorCHEONG, BHko
dc.contributor.authorChang, Kee-Jooko
dc.date.accessioned2013-02-25T18:55:10Z-
dc.date.available2013-02-25T18:55:10Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1993-12-
dc.identifier.citationPHYSICAL REVIEW LETTERS, v.71, no.26, pp.4354 - 4357-
dc.identifier.issn0031-9007-
dc.identifier.urihttp://hdl.handle.net/10203/64482-
dc.description.abstractWe examine the pressure behavior of two S-induced deep levels, which arise from negatively charged broken-bond (DX-) and on-site (D-) geometries, in GaAs and InP, and find the DX-state to be the ground state over the D- and shallow donor states at pressures of 18 and 88 kbar, respectively, in good agreement with experimental data. The DX- state is characterized by the conduction band structure, while the formation of the D- state is closely related to the local chemical bonding, exhibiting the semiconductor-dependent pressure variation.-
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.subjectNORM-CONSERVING PSEUDOPOTENTIALS-
dc.subjectDX CENTERS-
dc.subjectALXGA1-XAS ALLOYS-
dc.subjectHYDROSTATIC-PRESSURE-
dc.subjectSEMICONDUCTORS-
dc.subjectDONORS-
dc.titleMETASTABILITY AND CHEMICAL BONDING OF S-INDUCED DEFECTS IN GAAS AND INP-
dc.typeArticle-
dc.identifier.wosidA1993MN94400019-
dc.identifier.scopusid2-s2.0-4243209805-
dc.type.rimsART-
dc.citation.volume71-
dc.citation.issue26-
dc.citation.beginningpage4354-
dc.citation.endingpage4357-
dc.citation.publicationnamePHYSICAL REVIEW LETTERS-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorCHEONG, BH-
dc.type.journalArticleArticle-
dc.subject.keywordPlusNORM-CONSERVING PSEUDOPOTENTIALS-
dc.subject.keywordPlusDX CENTERS-
dc.subject.keywordPlusALXGA1-XAS ALLOYS-
dc.subject.keywordPlusHYDROSTATIC-PRESSURE-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusDONORS-
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