DC Field | Value | Language |
---|---|---|
dc.contributor.author | Y.W.Nam | ko |
dc.contributor.author | C.M.Lee | ko |
dc.contributor.author | H.B.Im | ko |
dc.contributor.author | J.G.Lee | ko |
dc.date.accessioned | 2013-02-25T17:58:09Z | - |
dc.date.available | 2013-02-25T17:58:09Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1990 | - |
dc.identifier.citation | 요업학회지, v.27, no.5, pp.645 - 651 | - |
dc.identifier.issn | 1225-1372 | - |
dc.identifier.uri | http://hdl.handle.net/10203/64129 | - |
dc.language | Korean | - |
dc.publisher | 한국요업학회 | - |
dc.title | Studies on the Electrical Resistance and the Behaviors of Excess Silicon of Tungsten Silicide During Oxidation | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 27 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 645 | - |
dc.citation.endingpage | 651 | - |
dc.citation.publicationname | 요업학회지 | - |
dc.contributor.localauthor | H.B.Im | - |
dc.contributor.nonIdAuthor | Y.W.Nam | - |
dc.contributor.nonIdAuthor | C.M.Lee | - |
dc.contributor.nonIdAuthor | J.G.Lee | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.