Analytical Threshold Voltage Model of Ion-Implanted MOSFET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | H.S.Kim | ko |
| dc.contributor.author | J.H.Jin | ko |
| dc.contributor.author | C.M.Kyung | ko |
| dc.date.accessioned | 2013-02-25T17:08:41Z | - |
| dc.date.available | 2013-02-25T17:08:41Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1985-11 | - |
| dc.identifier.citation | 전기학회논문지, v.22, no.6, pp.590 - 594 | - |
| dc.identifier.issn | 1975-8359 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/63798 | - |
| dc.language | English | - |
| dc.publisher | 대한전기학회 | - |
| dc.title | Analytical Threshold Voltage Model of Ion-Implanted MOSFET | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 22 | - |
| dc.citation.issue | 6 | - |
| dc.citation.beginningpage | 590 | - |
| dc.citation.endingpage | 594 | - |
| dc.citation.publicationname | 전기학회논문지 | - |
| dc.contributor.localauthor | C.M.Kyung | - |
| dc.contributor.nonIdAuthor | H.S.Kim | - |
| dc.contributor.nonIdAuthor | J.H.Jin | - |
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