MBE로 성장시킨 $GaAs/Al_{0.3}Ga_{0.7}A_{s}층의 고분해능 투과전자현미경에 의한 연구A High-Resolution Transmission Electron Microscopy Study of MBE Grown $GaAs/Al_{0.3}Ga_{0.7}A_{s}$ Layers
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이정용 | ko |
| dc.date.accessioned | 2013-02-25T16:11:43Z | - |
| dc.date.available | 2013-02-25T16:11:43Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1989-08 | - |
| dc.identifier.citation | 전자공학회논문지, v.26, no.8, pp.76 - 83 | - |
| dc.identifier.issn | 1016-135X | - |
| dc.identifier.uri | http://hdl.handle.net/10203/63450 | - |
| dc.language | Korean | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | MBE로 성장시킨 $GaAs/Al_{0.3}Ga_{0.7}A_{s}층의 고분해능 투과전자현미경에 의한 연구 | - |
| dc.title.alternative | A High-Resolution Transmission Electron Microscopy Study of MBE Grown $GaAs/Al_{0.3}Ga_{0.7}A_{s}$ Layers | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 26 | - |
| dc.citation.issue | 8 | - |
| dc.citation.beginningpage | 76 | - |
| dc.citation.endingpage | 83 | - |
| dc.citation.publicationname | 전자공학회논문지 | - |
| dc.contributor.localauthor | 이정용 | - |
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