MBE로 성장시킨 GaAs/AL0.3Ga0.7As층의 고분해능 투과전자현미경에 의한 연구A High-Resolution Transmission Electron Microscopy Study of MBE Grown GaAs/AL0.3Ga0.7As Layers
- Publisher
- 대한전자공학회
- Issue Date
- 1989-12
- Language
- Korean
- Citation
전자공학회논문지, v.26, no.8, pp.76 - 83
- ISSN
- 1016-135X
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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