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Browse "PH-Journal Papers(저널논문)" by Author DenBaars, SP

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Showing results 1 to 15 of 15

1	A comparison of the optical characteristics of AlGaN, GaN, and InGaN thin films Cho, Yong-Hoon; Schmidt, TJ; Gainer, GH; Lam, JB; Song, JJ; Keller, S; Mishra, UK; et al, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.216, no.1, pp.227 - 231, 1999-11
2	Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells Schmidt, TJ; Bidnyk, S; Cho, Yong-Hoon; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; et al, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, 1999
3	Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells Cho, Yong-Hoon; Little, BD; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, 1999
4	Comparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different in compositions Kwon, YH; Gainer, GH; Bidnyk, S; Cho, Yong-Hoon; Song, JJ; Hansen, M; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.5, pp.12 - 7, 2000
5	Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.5, pp.560 - 562, 1998-08
6	Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.22, pp.3181 - 3183, 1998-11
7	High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration Cho, Yong-Hoon; Fedler, F; Hauenstein, RJ; Park, GH; Song, JJ; Keller, S; Mishra, UK; et al, JOURNAL OF APPLIED PHYSICS, v.85, no.5, pp.3006 - 3008, 1999-03
8	High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells Bidnyk, S; Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; et al, APPLIED PHYSICS LETTERS, v.72, no.13, pp.1623 - 1625, 1998-03
9	Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Song, JJ; Keller, S; Minsky, MS; Hu, E; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.8, pp.1128 - 1130, 1998-08
10	Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 44, 1999
11	Linear and nonlinear optical properties of In(x)Ga(1-x)N/GaN heterostructures Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; et al, PHYSICAL REVIEW B, v.61, no.11, pp.7571 - 7588, 2000-03
12	Pump-probe spectroscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.13, pp.1892 - 1894, 1998-09
13	"S-shaped" temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Gainer, GH; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.10, pp.1370 - 1372, 1998-09
14	Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence Schmidt, TJ; Bidnyk, S; Cho, Yong-Hoon; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; et al, APPLIED PHYSICS LETTERS, v.73, no.25, pp.3689 - 3691, 1998-12
15	Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions Kwon, YH; Gainer, GH; Bidnyk, S; Cho, Yong-Hoon; Song, JJ; Hansen, M; DenBaars, SP, APPLIED PHYSICS LETTERS, v.75, no.17, pp.2545 - 2547, 1999-10

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