HIGH-SPEED SIGNAL SWITCHING WITH A MONOLITHIC INTEGRATED P-I-N AMP SWITCH ON INDIUM-PHOSPHIDE

Abstract

Operation of an optoelectronic integrated circuit which includes two p-i-ns, preamplifiers, 2 x 2 crosspoint switch, and output buffers has been demonstrated. These circuits have been fabricated in semi-insulating InP:Fe substrates by vapor phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at approximately 1 GHz.