Formation of Shallow p+ -n Junctions Using Boron-Nitride Solid Diffusion Source

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Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Issue Date
1987-12
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.8, no.12, pp.569 - 571

ISSN
0741-3106
URI
http://hdl.handle.net/10203/61925
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