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1
A medium energy ion scattering analysis of the Si-SiO2 interface formed by ion beam oxidation of silicon

Kim, YP; Choi, Si-Kyung; Ha, YH; Kim, Sehun; Kim, HK; Moon, DW, APPLIED SURFACE SCIENCE, v.117, pp.207 - 211, 1997-06

2
Hydrogen-surfactant mediated growth of Ge on Si(001)

Kahng, SJ; Ha, YH; Park, JY; Kim, Sehun; Moon, DW; Kuk, Y, PHYSICAL REVIEW LETTERS, v.80, no.22, pp.4931 - 4934, 1998-06

3
Low sputter damage of metal single crystalline surfaces investigated with medium energy ion scattering spectroscopy

Moon, DW; Ha, YH; Kim, HK; Kim, KJ; Kim, HS; Lee, JeongYong; Kim, Sehun, APPLIED SURFACE SCIENCE, v.150, no.1-4, pp.235 - 243, 1999-08

4
Relaxation of the Si lattice strain in the Si(001)-SiO2 interface by annealing in N2O

Ha, YH; Kim, Sehun; Lee, SY; Kim, JH; Baek, DH; Kim, HK; Moon, DW, APPLIED PHYSICS LETTERS, v.74, no.23, pp.3510 - 3512, 1999-06

5
The electronic energy loss of 100 keV heavy ions in medium energy ion scattering analysis of a Ta2O5 ultrathin film

Moon, DW; Kim, HK; Kim, YP; Ha, YH; Choi, Si-Kyung; Kim, Sehun, NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.125, no.1-4, pp.120 - 123, 1997-04

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