DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoo, Hoi-Jun | ko |
dc.contributor.author | HAYES, JR | ko |
dc.contributor.author | CANEAU, C | ko |
dc.contributor.author | BHAT, R | ko |
dc.contributor.author | KOZA, M | ko |
dc.date.accessioned | 2013-02-25T11:25:53Z | - |
dc.date.available | 2013-02-25T11:25:53Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1989-02 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.25, no.3, pp.191 - 192 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/61847 | - |
dc.language | English | - |
dc.publisher | IEE-INST ELEC ENG | - |
dc.title | FABRICATION OF LATERAL PLANAR INP/GAINASP HETEROJUNCTION BIPOLAR-TRANSISTOR BY SELECTIVE AREA EPITAXIAL-GROWTH | - |
dc.type | Article | - |
dc.identifier.wosid | A1989T234500013 | - |
dc.identifier.scopusid | 2-s2.0-0024959409 | - |
dc.type.rims | ART | - |
dc.citation.volume | 25 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 191 | - |
dc.citation.endingpage | 192 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.identifier.doi | 10.1049/el:19890138 | - |
dc.contributor.localauthor | Yoo, Hoi-Jun | - |
dc.contributor.nonIdAuthor | HAYES, JR | - |
dc.contributor.nonIdAuthor | CANEAU, C | - |
dc.contributor.nonIdAuthor | BHAT, R | - |
dc.contributor.nonIdAuthor | KOZA, M | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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