DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, HyoHoon | ko |
dc.contributor.author | NAM, ES | ko |
dc.contributor.author | LEE, YT | ko |
dc.contributor.author | LEE, EH | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.date.accessioned | 2013-02-25T11:21:20Z | - |
dc.date.available | 2013-02-25T11:21:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-10 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.59, no.16, pp.2025 - 2027 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/61792 | - |
dc.description.abstract | The microstructural degradation of a lattice-matched Ga0.28In0.72As0.61P0.39/InP heterointerface induced by Zn diffusion has been investigated using transmission electron microscopy. The localized interfacial stress caused by intermixing appears to create stacking faults in the Ga-mixed InP substrate, and dislocation tangles in the In-mixed GaInAsP layer. The observed results are attributed to the contrasted effect of tensile and compressive stresses upon the nucleation of dislocations from both sides of the GaInAsP/GaInP interface. As an evidence of the interface nucleation, we find a stacking fault at the tensile interface, which is bounded by a pair of partials having opposite Burgers vectors. A model is proposed to explain the strain relaxation in the intermixed region in terms of nucleation and splitting mechanisms of the paired dislocations. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | INTERFACES | - |
dc.subject | SI | - |
dc.title | FORMATION OF MISFIT DISLOCATIONS DURING ZN-DIFFUSION-INDUCED INTERMIXING OF A GAINASP/INP HETEROSTRUCTURE | - |
dc.type | Article | - |
dc.identifier.wosid | A1991GJ63800036 | - |
dc.identifier.scopusid | 2-s2.0-36449007494 | - |
dc.type.rims | ART | - |
dc.citation.volume | 59 | - |
dc.citation.issue | 16 | - |
dc.citation.beginningpage | 2025 | - |
dc.citation.endingpage | 2027 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.106120 | - |
dc.contributor.localauthor | Park, HyoHoon | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | NAM, ES | - |
dc.contributor.nonIdAuthor | LEE, YT | - |
dc.contributor.nonIdAuthor | LEE, EH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | INTERFACES | - |
dc.subject.keywordPlus | SI | - |
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