DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조영송 | ko |
dc.contributor.author | 나극환 | ko |
dc.contributor.author | 임광호 | ko |
dc.contributor.author | 신철재 | ko |
dc.date.accessioned | 2013-02-25T10:12:44Z | - |
dc.date.available | 2013-02-25T10:12:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-06 | - |
dc.identifier.citation | 한국전자파학회 논문지, v.2, no.2, pp.30 - 37 | - |
dc.identifier.issn | 1226-3133 | - |
dc.identifier.uri | http://hdl.handle.net/10203/61424 | - |
dc.language | Korean | - |
dc.publisher | 한국전자파학회 | - |
dc.title | EXTRACTION OF EXTRINSIC PARARNETERS FOR GaAs MESFET BY S-PARAMETERS | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 2 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 30 | - |
dc.citation.endingpage | 37 | - |
dc.citation.publicationname | 한국전자파학회 논문지 | - |
dc.contributor.localauthor | 임광호 | - |
dc.contributor.nonIdAuthor | 조영송 | - |
dc.contributor.nonIdAuthor | 나극환 | - |
dc.contributor.nonIdAuthor | 신철재 | - |
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